发明名称 |
Method and apparatus for an improved deposition shield in a plasma processing system |
摘要 |
The present invention presents an improved deposition shield for surrounding a process space in a plasma processing system, wherein the design and fabrication of the deposition shield advantageously provides for a clean processing plasma in the process space with substantially minimal erosion of the deposition shield.
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申请公布号 |
US2007028839(A1) |
申请公布日期 |
2007.02.08 |
申请号 |
US20060581000 |
申请日期 |
2006.10.16 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SAIGUSA HIDEHITO;TAKASE TAIRA;MITSUHASHI KOUJI;NAKAYAMA HIROYUKI |
分类号 |
B05D1/02;B05D1/40;B05D5/00;C23C16/00;H01J37/32;H01L21/205;H01L21/306;H01L21/3065;H05H1/00 |
主分类号 |
B05D1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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