发明名称 Method and apparatus for an improved deposition shield in a plasma processing system
摘要 The present invention presents an improved deposition shield for surrounding a process space in a plasma processing system, wherein the design and fabrication of the deposition shield advantageously provides for a clean processing plasma in the process space with substantially minimal erosion of the deposition shield.
申请公布号 US2007028839(A1) 申请公布日期 2007.02.08
申请号 US20060581000 申请日期 2006.10.16
申请人 TOKYO ELECTRON LIMITED 发明人 SAIGUSA HIDEHITO;TAKASE TAIRA;MITSUHASHI KOUJI;NAKAYAMA HIROYUKI
分类号 B05D1/02;B05D1/40;B05D5/00;C23C16/00;H01J37/32;H01L21/205;H01L21/306;H01L21/3065;H05H1/00 主分类号 B05D1/02
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