发明名称 |
Method for depositing compounds on a substrate by means of metalorganic chemical vapor deposition |
摘要 |
The invention relates to a method for depositing compounds on a substrate by means of metalorganic chemical vapor deposition and a first mixture comprising at least one carrier gas and at least one organometallic compound as well as a second mixture comprising at least one carrier gas and at least one group V compound or group VI compound, both mixtures being separately fed into an MOCVD system. According to the invention, the first mixture comprising at least one carrier gas and at least one organometallic compound is directed into the system between the substrate and the second mixture comprising at least one carrier gas and at least one group V compound or group VI compound, which has the advantageous effect of creating no parasitic deposits on the walls of the MOCVD system. Hence, the deposition rates are increased compared with methods known in prior art.
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申请公布号 |
US2007031991(A1) |
申请公布日期 |
2007.02.08 |
申请号 |
US20040550365 |
申请日期 |
2004.02.20 |
申请人 |
FORSCHUNGSZENTRUM JULICH GMBH |
发明人 |
HARDTDEGEN HILDE;SCHMIDT ROLAND;KALUZA NICOLETA;WIRTZ KONRAD;MAKAROV YURI |
分类号 |
H01L21/365;C23C16/00;C23C16/30;C23C16/44;C23C16/455;C30B25/02 |
主分类号 |
H01L21/365 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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