TECHNIQUE FOR EFFICIENTLY PATTERNING AN UNDERBUMP METALLIZATION LAYER USING A DRY ETCH PROCESS

摘要

By patterning an underbump metallization layer stack (105) on the basis of a dry etch process (111), significant advantages may be achieved compared to conventional techniques involving a highly complex wet chemical etch process. In particular embodiments, a titanium tungsten layer or any other appropriate last layer (105B) of an underbump metallization layer stack (105) may be etched on the basis of a plasma etch process (107) using a fluorine-based chemistry and oxygen as a physical component. Moreover, appropriate cleaning processes (110, 113) may be performed for removing particles (109) and residues (112) prior to and after the plasma-based patterning process (107).