METAL-CONTAINING COMPOUND, PROCESS FOR PRODUCING THE SAME, METAL-CONTAINING THIN FILM, AND METHOD OF FORMING THE SAME

摘要

A compound which has thermal stability and moderate vaporizability and is satisfactory as a material for the CVD or ALD method; a process for producing the compound; a thin film formed from the compound as a raw material; and a method of forming the thin film. A compound represented by the general formula (1) is produced by reacting a compound represented by the general formula (2) with a compound represented by the general formula (3). The compound produced is used as a raw material to form a metal-containing thin film. [Chemical formula 1] (1) [Chemical formula 2] (2) [Chemical formula 3] M<SUB>p</SUB>(NR<SUP>4</SUP>R<SUP>5</SUP>)<SUB>q</SUB> (3) (In the formulae, M represents a Group 4 element, aluminum, gallium, etc.; n is 2 or 3 according to cases; R<SUP>1</SUP> and R<SUP>3</SUP> each represents C<SUB>1-6</SUB> alkyl, etc.; R<SUP>2</SUP> represents C<SUB>1-6</SUB> alkyl, etc.; R<SUP>4</SUP> and R<SUP>5</SUP> each represents C<SUB>1-4</SUB> alkyl, etc.; X represents hydrogen, lithium, or sodium; p is 1 or 2 according to cases; and q is 4 or 6 according to cases.)