| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile memory in which erroneous write-in is prevented and a write-in characteristic having high reliability is obtained. SOLUTION: In the non-volatile memory in which a ferroelectric transistors in which gate electrodes are laminated through a first ferroelectric layer are arranged in a matrix state on a semiconductor substrate surface between source and a drain regions formed on the semiconductor substrate, a gate electrode is connected to a word line, a source region is connected to a source line, and a drain region is connected to a drain line, the semiconductor substrate is separated by each column and applied with voltage independently and connected to a back gate line, potentials of a source line and a drain line can be set to a floating potential or a ground potential for each row and each column, source/drain potentials are kept at a desired value for a non-selection cell near a selection cell, at the write-in of data for the selection cell, a depletion layer is spread in a channel region of a ferroelectric transistor constituting a near non-selection cell, an inversion layer is obstructed to be formed.</p> |
