| 发明名称 |
Gallium nitride device substrate comprising a gallium nitride based buffer layer and method of manufacturing the same |
| 摘要 |
<p>A gallium nitride device substrate (100) comprises a layer (110) of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate (114).</p> |
| 申请公布号 |
EP1750311(A2) |
申请公布日期 |
2007.02.07 |
| 申请号 |
EP20060015818 |
申请日期 |
2006.07.28 |
| 申请人 |
AVAGO TECHNOLOGIES ECBU IP (SINGAPORE) PTE. LTD. |
发明人 |
LESTER, STEVEN D.;ROBBINS, VIRGINIA M.;CORZINE, SCOTT W. |
| 分类号 |
C30B25/18;C30B29/40;H01L21/20;H01L33/00 |
主分类号 |
C30B25/18 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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