发明名称 Magnetoresistive element, method for making the same, and magnetic memory device incorporating the same
摘要 A magnetoresistive element including a free layer having rotatable magnetization, in which information is recorded in the magnetoresistive element by the rotation of the magnetization of the free layer, is provided. The free layer is a laminate that includes at least one ferromagnetic sublayer composed of a ferromagnetic material and at least one low-saturation-magnetization ferromagnetic sublayer having a lower saturation magnetization than that of the ferromagnetic sublayer.
申请公布号 US7173300(B2) 申请公布日期 2007.02.06
申请号 US20020328118 申请日期 2002.12.23
申请人 SONY CORPORATION 发明人 MIZUGUCHI TETSUYA;BESSHO KAZUHIRO
分类号 H01F10/14;H01L29/76;G11C8/16;H01F10/32;H01F41/30;H01L21/8246;H01L27/105;H01L43/08;H01L43/12 主分类号 H01F10/14
代理机构 代理人
主权项
地址