发明名称 |
Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus |
摘要 |
A process for producing an image display device using a thin film semiconductor device is provided which includes forming a polycrystalline semiconductor thin film on a substrate. A substantially belt-shaped crystal is formed which is crystallized so as to grow crystal grains in a direction substantially parallel to a scanning direction of a CW laser beam by scanning the CW laser beam along the substrate, thereby irradiating the CW laser beam on portions of the polycrystalline semiconductor thin film formed onto the substrate.
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申请公布号 |
US7172932(B2) |
申请公布日期 |
2007.02.06 |
申请号 |
US20040862399 |
申请日期 |
2004.06.08 |
申请人 |
HITACHI, LTD. |
发明人 |
HATANO MUTSUKO;YAMAGUCHI SHINYA;KIMURA YOSHINOBU;PARK SEONG-KEE |
分类号 |
H01L21/84;H01L29/786;C30B1/00;H01L21/00;H01L21/20;H01L21/26;H01L21/324;H01L21/336;H01L21/36;H01L21/42;H01L21/44;H01L21/4763;H01L21/477;H01L23/62;H01L27/01;H01L27/12;H01L31/0328;H01L31/0336;H01L31/0392;H01L31/072;H01L31/109 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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