发明名称 Process for the production of thin semiconductor material films
摘要 Process for the preparation of thin monocrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar face to the three following stages: a first stage of implantation by bombardment ( 2 ) of the face ( 4 ) of the said wafer ( 1 ) by means of ions creating in the volume of said wafer a layer ( 3 ) of gaseous microbubbles defining in the volume of said wafer a lower region ( 6 ) constituting the mass of the substrate and an upper region ( 5 ) constituting the thin film, a second stage of intimately contacting the planar face ( 4 ) of said wafer with a stiffener ( 7 ) constituted by at least one rigid material layer, a third stage of heat treating the assembly of said wafer ( 1 ) and said stiffener ( 7 ) at a temperature above that at which the ion bombardment ( 2 ) was carried out and sufficient to create by a crystalline rearrangement effect in said wafer ( 1 ) and a pressure effect in the said microbubbles, a separation between the thin film ( 5 ) and the mass of the substrate ( 6 ).
申请公布号 USRE39484(E1) 申请公布日期 2007.02.06
申请号 US20030449786 申请日期 2003.05.30
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 BRUEL MICHEL
分类号 H01L21/205;H01L21/42;B28D1/00;B28D5/00;G01L9/00;H01L21/02;H01L21/027;H01L21/265;H01L21/324;H01L21/477;H01L21/762;H01L27/12;H01L29/12;H01L31/04;H01L33/00 主分类号 H01L21/205
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