摘要 |
Process for the preparation of thin monocrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar face to the three following stages: a first stage of implantation by bombardment ( 2 ) of the face ( 4 ) of the said wafer ( 1 ) by means of ions creating in the volume of said wafer a layer ( 3 ) of gaseous microbubbles defining in the volume of said wafer a lower region ( 6 ) constituting the mass of the substrate and an upper region ( 5 ) constituting the thin film, a second stage of intimately contacting the planar face ( 4 ) of said wafer with a stiffener ( 7 ) constituted by at least one rigid material layer, a third stage of heat treating the assembly of said wafer ( 1 ) and said stiffener ( 7 ) at a temperature above that at which the ion bombardment ( 2 ) was carried out and sufficient to create by a crystalline rearrangement effect in said wafer ( 1 ) and a pressure effect in the said microbubbles, a separation between the thin film ( 5 ) and the mass of the substrate ( 6 ).
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