发明名称 |
Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same |
摘要 |
A thin film semiconductor transistor structure has a substrate with a dielectric surface, and an active layer made of a semiconductor thin film exhibiting a crystallinity as equivalent to the single-crystalline. To fabricate the transistor, the semiconductor thin film is formed on the substrate, which film includes a mixture of a plurality of crystals which may be columnar crystals and/or capillary crystal substantially parallel to the substrate. The resultant structure is then subject to thermal oxidation in a chosen atmosphere containing halogen, thereby removing away any metallic element as contained in the film. This may enable formation of a mono-domain region in which the individual columnar or capillary crystal is in contact with any adjacent crystals and which is capable of being substantially deemed to be a single-crystalline region without presence or inclusion of any crystal grain boundaries therein. This region is for use in forming the active layer of the transistor.
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申请公布号 |
US7172929(B2) |
申请公布日期 |
2007.02.06 |
申请号 |
US20040843613 |
申请日期 |
2004.05.12 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;MIYANAGA AKIHARU;FUKUNAGA TAKESHI |
分类号 |
H01L21/00;G02B27/00;G02B27/01;H01L21/20;H01L21/336;H01L21/77;H01L21/822;H01L21/84;H01L29/04;H01L29/786 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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