发明名称 |
Integrated circuit arrangement having capacitors and having planar transistors and fabrication method |
摘要 |
An integrated circuit arrangement and method of fabricating the integrated circuit arrangement is described. The integrated circuit arrangement contains an insulating region and a sequence of regions which forms a capacitor. The sequence contains a near electrode region near the insulating region, a dielectric region, and a remote electrode region remote from the insulating region. The insulating region is part of an insulating layer arranged in a plane. The capacitor and an active component are arranged on the same side of the insulating layer and form a memory cell. The near electrode region and an active region of the component are arranged in a plane which lies parallel to the plane in which the insulating layer is arranged. A processor is also contained in the integrated circuit arrangement.
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申请公布号 |
US7173302(B2) |
申请公布日期 |
2007.02.06 |
申请号 |
US20050531493 |
申请日期 |
2005.04.15 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BREDERLOW RALF;HARTWICH JESSICA;PACHA CHRISTIAN;ROESNER WOLFGANG;SCHULZ THOMAS |
分类号 |
H01L27/108;H01L21/8242;H01L21/84;H01L27/12 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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