发明名称 Integrated circuit arrangement having capacitors and having planar transistors and fabrication method
摘要 An integrated circuit arrangement and method of fabricating the integrated circuit arrangement is described. The integrated circuit arrangement contains an insulating region and a sequence of regions which forms a capacitor. The sequence contains a near electrode region near the insulating region, a dielectric region, and a remote electrode region remote from the insulating region. The insulating region is part of an insulating layer arranged in a plane. The capacitor and an active component are arranged on the same side of the insulating layer and form a memory cell. The near electrode region and an active region of the component are arranged in a plane which lies parallel to the plane in which the insulating layer is arranged. A processor is also contained in the integrated circuit arrangement.
申请公布号 US7173302(B2) 申请公布日期 2007.02.06
申请号 US20050531493 申请日期 2005.04.15
申请人 INFINEON TECHNOLOGIES AG 发明人 BREDERLOW RALF;HARTWICH JESSICA;PACHA CHRISTIAN;ROESNER WOLFGANG;SCHULZ THOMAS
分类号 H01L27/108;H01L21/8242;H01L21/84;H01L27/12 主分类号 H01L27/108
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