| 摘要 |
Plural trench isolation films ( 4 ) are provided with portions of an SOI layer ( 3 ) interposed therebetween in a surface of the SOI layer ( 3 ) in a resistor region (RR) where a spiral inductor (SI) is to be provided. Resistive element ( 30 ) are formed on the trench isolation films ( 4 ), respectively. Each of the trench isolation films ( 4 ) includes a central portion which passes through the SOI layer ( 3 ) and reaches a buried oxide film ( 2 ) to include a full-trench isolation structure, and opposite side portions each of which passes through only a portion of the SOI layer ( 3 ) and is located on the SOI layer 3 to include a partial-trench isolation structure. Thus, each of the trench isolation films ( 4 ) includes a hybrid-trench isolation structure.
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