发明名称 Semiconductor memory device for enhancing refresh operation in high speed data access
摘要 A semiconductor device for refreshing data stored in a memory device includes a cell area having N+1 number of unit cell blocks, each including M number of word lines which respectively are coupled to a plurality of unit cells; a tag block having N+1 number of unit tag blocks, each storing at least one physical cell block address denoting a row address storing a data; and a control block for controlling the tag block and the predetermined cell block table for refreshing the data in the plurality of unit cells coupled to a word line in response to the physical cell block address.
申请公布号 US7174418(B2) 申请公布日期 2007.02.06
申请号 US20030749766 申请日期 2003.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HONG SANG-HOON;AHN JIN-HONG;KO JAE-BUM;KIM SE-JUN
分类号 G06F12/00;G11C11/401;G06F13/00;G11C11/406 主分类号 G06F12/00
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