发明名称 Semiconductor device and method of manufacturing the same
摘要 A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
申请公布号 US7173283(B2) 申请公布日期 2007.02.06
申请号 US20040981608 申请日期 2004.11.05
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 FUJIMOTO ETSUKO;MURAKAMI SATOSHI;YAMAZAKI SHUNPEI;EGUCHI SHINGO
分类号 H01L29/04;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/786 主分类号 H01L29/04
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