发明名称 |
Ferroelectric memory device with merged-top-plate structure and method for fabricating the same |
摘要 |
The inventive ferroelectric memory device includes: a semiconductor substrate providing elements of a transistor; a first inter-layer insulating layer formed on the semiconductor substrate; a storage node contact connected to elements of the transistor by passing through the first inter-layer insulating layer; a barrier layer contacting simultaneously to the storage node contact and the first inter-layer insulating layer; a lower electrode having a space for isolating the first inter-layer insulating layer and being formed on the barrier layer; a glue layer being formed on the first inter-layer insulating layer and encompassing lateral sides of the lower electrode as filling the space; a second inter-layer insulating layer exposing a surface of the lower electrode and encompassing the glue layer; a ferroelectric layer formed on the glue layer including the second inter-layer insulating layer; and an upper electrode formed on the ferroelectric layer.
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申请公布号 |
US7173301(B2) |
申请公布日期 |
2007.02.06 |
申请号 |
US20050135767 |
申请日期 |
2005.05.23 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
CHOI EUN-SEOK;YEOM SEUNG-JIN |
分类号 |
H01L21/8242;H01L29/76;H01L21/02;H01L21/8246;H01L27/115 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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