发明名称 |
Method of making a nanogap for variable capacitive elements, and device having a nanogap |
摘要 |
A method for fabricating a variable capacitive device including providing a base silicon-bearing compound electrode which is vertically-inclined with respect to a substrate, depositing a sacrificial layer on the base electrode, depositing a silicon-bearing compound electrode on the sacrificial layer which is also vertically-inclined with respect to the substrate, and removing the sacrificial layer from between the base silicon-bearing compound electrode and the grown silicon-bearing compound electrode. A variable capacitive device having a fixed vertically-inclined silicon-bearing compound electrode and a movable vertically-inclined silicon-bearing compound electrode produced by arranging a sacrificial layer on a base silicon-bearing compound electrode, depositing a grown silicon-bearing compound electrode on the sacrificial layer, and etching the sacrificial layer. Between the fixed silicon-bearing compound and the movable silicon-bearing compound electrode is a nanogap, the nanogap having a uniform width.
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申请公布号 |
US7172917(B2) |
申请公布日期 |
2007.02.06 |
申请号 |
US20030418617 |
申请日期 |
2003.04.17 |
申请人 |
THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY |
发明人 |
PARTRIDGE AARON;LUTZ MARKUS;KENNY THOMAS |
分类号 |
H01L21/20;H01G5/16;H01L;H01L21/00;H01L27/14;H01L29/82;H01L29/84 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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