发明名称 |
Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer |
摘要 |
A cost efficient and manufacturable method of fabricating strained semiconductor-on-insulator (SSOI) substrates is provided that avoids wafer bonding. The method includes growing various epitaxial semiconductor layers on a substrate, wherein at least one of the semiconductor layers is a doped and relaxed semiconductor layer underneath a strained semiconductor layer; converting the doped and relaxed semiconductor layer into a porous semiconductor via an electrolytic anodization process, and oxidizing to convert the porous semiconductor layer into a buried oxide layer. The method provides a SSOI substrate that includes a relaxed semiconductor layer on a substrate; a high-quality buried oxide layer on the relaxed semiconductor layer; and a strained semiconductor layer on the high-quality buried oxide layer. In accordance with the present invention, the relaxed semiconductor layer and the strained semiconductor layer have identical crystallographic orientations.
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申请公布号 |
US7172930(B2) |
申请公布日期 |
2007.02.06 |
申请号 |
US20040883887 |
申请日期 |
2004.07.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ADAM THOMAS N.;BEDELL STEPHEN W.;DE SOUZA JOEL P.;FOGEL KEITH E.;REZNICEK ALEXANDER;SADANA DEVENDRA K.;SHAHIDI GHAVAM |
分类号 |
H01L21/00;H01L21/20;H01L21/331;H01L21/36;H01L21/762;H01L21/8222;H01L21/84 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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