发明名称 Thin film transistor array panel and manufacturing method thereof
摘要 A method of manufacturing a thin film transistor array panel including forming a gate line on a substrate, forming a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer, forming a data line and a drain electrode on the semiconductor layer, depositing a passivation layer on the data line and the drain electrode, forming a photoresist including a first portion and a second portion, which is thinner than the first portion, on the passivation layer, etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode, removing the second portion of the photoresist, depositing a conductive film, and removing the first portion of the photoresist to form a pixel electrode on the exposed portion of the drain electrode.
申请公布号 US7172913(B2) 申请公布日期 2007.02.06
申请号 US20050082967 申请日期 2005.03.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE WOO-GEUN;CHO BEOM-SEOK;LEE JE-HUN;JEONG CHANG-OH;KIM SANG-GAB;OH MIN-SEOK;LEE YOUNG-WOOK;CHOE HEE-HWAN
分类号 G02F1/1368;H01L21/00;G09F9/30;G09G3/36;G09G3/38;H01L21/311;H01L21/3213;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786 主分类号 G02F1/1368
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