| 摘要 |
A SENSE AMPLIFIER OF FERROELECTRIC MEMORY DEVICE features improvement of the amplification degree. The SENSE AMPLIFIER OF FERROELECTRIC MEMORY DEVICE comprises a MBL sensing unit, a voltage dropping unit, a coupling regulation unit, a pull-down regulation unit, a sensing load unit, and an amplification unit. The level of the sensed voltage is double regulated, thereby improving the amplification degree on low voltage sensing data, and a small sensing voltage of a main bit line can be embodied, thereby embodying a lower voltage memory.
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