| 摘要 |
A silicon-on-insulator (SOI) sense amplifier for sensing bit values stored in a memory cell, includes first and second input field effect transistors (FETs), connected to first and second cross-coupled CMOS inverter FET pairs. The input FETs are implemented as floating body FETs, which decreases gate capacitances and increases sense operation speed. History effect problems are minimized as threshold voltage differences are kept small.
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