| 摘要 |
An ion implantation apparatus is provided to prevent residual of gas around a wafer by promptly eliminating out gas generated from the wafer, a vacuum chamber, and the like. A rotational body(100) is comprised of wafer mounting plates(101), a driver(102) for rotating the wafer mounting plates, and a gas eliminating member(103). Each of the wafer mounting plates has a wafer mounting surface(106) at a predetermined side. The gas eliminating member is protruded from a direction of the rotational body and has a gas eliminating wall. The gas eliminating wall is collided with gas existing on the wafer mounting plate by a revolution of the wafer mounting plate, thereby eliminating the gas toward an upper or rear direction of the wafer mounting surface.
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