| 摘要 |
A T-type gate electrode and a method for forming the same are provided to control easily a fine CD(Critical Dimension) of the gate electrode itself without the generation of short by using a dummy gate layer. An electronic beam resist pattern is formed on a semiconductor substrate with a buffer layer, a barrier layer, a second etch stop layer, a dummy gate layer, a first etch stop layer, a cap layer and a passivation layer(S101). The passivation layer is selectively removed by using first etching process(S102). The cap layer and the first etch stop layer are selectively removed by using second etching process(S103). A gate mask is formed in the cap layer and the first etch stop layer(S104). A recess etching process is performed on the dummy gate layer(S105). A metal film for a gate electrode is deposited on the gate mask(S106).
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