| 摘要 |
A semiconductor device comprises an n-type MIS transistor comprising a first gate insulating film and a first gate electrode including an MSi<SUB>x </SUB>film formed on the first gate insulating film, where M represents a metal element selected from tungsten and molybdenum and x is greater than 1, i.e., x>1; and a p-type MIS transistor comprising a second gate insulating film and a second gate electrode including an MSi<SUB>y </SUB>film formed on the second gate insulating film, where y is not less than 0 and less than 1, i.e., 0<=y<1.
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