| 摘要 |
A device and a method for breaking the leakage current path, wherein the leakage current is caused by a defect in a memory cell of a memory array, are provided. The device includes a column selection line, a row selection line, a switch device coupled to the column selection line, the row selection line, a power supply terminal and a memory cell. When a column turn-off signal is coupled to the column selection line and a row turn-off signal is coupled to the row selection line, the switch device is turned off and thus a power from the power supply terminal can not be coupled to the memory cell. When at least one of the column selection line and the row selection line does not receive the turn-off signal, the switch device is not turned off and the power can be coupled to the memory cell.
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