Method of measuring pattern dimension and method of controlling semiconductor device process

摘要

This invention provides a method of measuring semiconductor pattern dimensions capable of realizing a stable and highly precise pattern dimension measurement technique even when the pattern cross-sectional shapes are changed and making the calculation amount relatively small to reduce the calculation time. More specifically, the relationship between cross-sectional shapes of a pattern and measurement errors in a specified image processing technique is evaluated in advance by the electron beam simulation in a pattern measurement system in a length measuring SEM, and in the actual dimension measurement, dimensions of an evaluation objective pattern are measured from image signals of a scanning electron microscope, and errors of the dimensional measurement of the evaluation objective pattern are estimated and revised based on the relationship between cross-sectional shapes of a pattern and measurement errors evaluated in advance, thereby realizing highly precise measurement where dimensional errors depending on pattern solid shapes are eliminated.