发明名称 |
Nonvolatile memory device for preventing bitline high voltage from discharge |
摘要 |
According to some embodiments, a nonvolatile semiconductor memory device includes high voltage circuits that prevent high voltages, which are applied to bitlines during an erase operation, from being applied to low voltage circuits that are operable with low voltages. Each high voltage circuit includes a first switching circuit for selectively isolating the low voltage circuit from the bitlines, and a second switching circuit for inhibiting a leakage current to the low voltage circuit from the bitlines. The second switching circuit is connected between the first switching circuit and the low voltage circuit.
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申请公布号 |
US7173861(B2) |
申请公布日期 |
2007.02.06 |
申请号 |
US20040977703 |
申请日期 |
2004.10.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO HYUN-CHUL;LEE YEONG-TAEK |
分类号 |
G11C16/04;G11C16/06;G11C5/06;G11C16/14;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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