Ferroelectric capacitor and Method for forming the same in semiconductor device,申请号KR20000029641-传众专利搜索

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发明名称	Ferroelectric capacitor and Method for forming the same in semiconductor device
摘要
申请公布号	KR100677775(B1)	申请公布日期	2007.02.05
申请号	KR20000029641	申请日期	2000.05.31
申请人		发明人
分类号	G11C11/24	主分类号	G11C11/24
代理机构		代理人
主权项
地址

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