| 摘要 |
A nitride-based compound semiconductor LED is provided to reduce thermal damages to other stacked materials formed in a heat treatment of an n-electrode by decreasing the temperature of the heat treatment to 600 deg.C or lower. A nitride-based compound semiconductor LED includes an n-type compound semiconductor layer(12), an active layer(14) and a p-type compound semiconductor layer(16) that are formed between an n-electrode(31) and a p-electrode(20). The n-electrode has first and second electrode layers(31a,31b). The first electrode layer is made of at least one element selected from a group of Pd, Pt, Ni, Co, Rh, Ir, Fe, Ru, Os, Cu, Ag and Au. The second electrode layer is made of a conductive material including at least one element selected from a group of Ti, V, Cr, Zr, Nb, Hf, Ta, Mo, W, Re, Ir, Al, In, Pb, Ni, Rh, Ru, Os and Au. A heat treatment process is performed on the n-electrode in a temperature scope of 200~900 deg.C.
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