| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has a structure suitable for obtaining a large capacity value with less variance, and to provide its manufacturing method. <P>SOLUTION: The semiconductor device 1 is provided with wiring 12, a conductive film 14 (first conductive film), an insulating film 20 (first insulating film), a conductive film 30 (second conductive film), an insulating film 40 (second insulating film), a via plug 52 (first via plug), and via plug 54 (second via plug). The conductive film 14, the insulating film 20 and the conductive film 30 constitute an MIM capacitor (capacity element) in the semiconductor device 1. In concrete, the conductive film 14, the insulating film 20, and the conductive film 30 function as a lower electrode, a capacity insulating film, and an upper electrode, respectively. The insulating film 40 covers both the conductive film 30 and the wiring 12, and it functions as an etching stopper to the via plugs 52 and 54. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
