| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a SAW device capable of forming a high quality oxide film which does not produce influences such as a loss, deterioration, etc. SOLUTION: In the method of manufacturing the SAW device for making a protecting film formed by silicon dioxide mainly on an IDT electrode of a piezoelectric substrate after forming the IDT electrode 33 on the piezoelectric substrate 32, the SAW device can be formed by forming the silicon dioxide film by sputtering while introducing inert gas into a chamber and introducing oxygen into the chamber simultaneously. COPYRIGHT: (C)2007,JPO&INPIT
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