发明名称 |
FLAT DISPLAY AND MANUFACTURING METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a flat display for less degradation in characteristics of an organic thin film transistor. SOLUTION: The manufacturing method of a flat display includes a step for providing an insulating substrate; a step to form a source electrode and a drain electrode that are provided apart to define a channel region on the insulating substrate; a step for forming a first protective layer on the source electrode and the drain electrode; a step for forming a metal layer in which an opening corresponding to the channel region is provided on the first protective layer; a step for forming a placement hole for exposing the channel region on the first protective layer through the opening with the metal layer as a mask, a step for forming an organic semiconductor layer and a second protective layer sequentially inside the placement hole and on the metal layer; and a step for removing the second protective layer and the organic semiconductor layer other than the placement hole and the metal layer. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007027733(A) |
申请公布日期 |
2007.02.01 |
申请号 |
JP20060191301 |
申请日期 |
2006.07.12 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
CHOI TAE-YOUNG;KIM JUN-HYEONG;SO KONKEI;KO MUNSHAKU |
分类号 |
H01L29/786;H01L21/336;H01L51/05;H01L51/40 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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