Method of fabricating flash memory device having self-aligned floating gate

摘要

A method of fabricating a flash memory device having a self-aligned floating gate (SAFG) wherein a floating gate is formed by a SAFG process. After a dielectric layer is formed, the dielectric layer of a test pattern region is stripped and a control gate is formed so that the control gate and the floating gate are interconnected. Therefore, a test transistor can be formed even in the SAFG scheme.