Process of forming an as-grown active p-type III-V nitride compound

摘要

In a method of forming an as-grown active p-type III-V nitride compound layer, a substrate is introduced and heated in a reaction chamber. N₂ carrier gas and reactive compounds including a source compound of a group III element, a nitrogen source compound, and a p-type impurity are fed in the reaction chamber. A chemical reaction occurs to form an as-grown active p-type III-V nitride compound layer.