| 摘要 |
The invention is directed to a flash memory comprising a first source/drain region, a second source/drain region, a first floating gate, a second floating gate, a lightly doped region and a control gate. The first source/drain region and the second source/drain region are located in the substrate and apart from each other. The first floating gate and the second floating gate are isolated from each other and are located on the substrate between the first and the second source/drain regions, wherein the first floating gate is close to the first source/drain region and the second floating gate is close to the second source/drain region. The lightly doped region is located in the substrate between the first and the second floating gates. Also, the control gate is located over the substrate and isolated from the first and the second floating gates.
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