Y2O3 FILM AND PROCESS FOR PRODUCING THE SAME

摘要

There is provided by the invention a member having high resistance to plasma corrosion required for a plasma etching chamber of a semiconductor manufacturing apparatus or a plasma treatment apparatus for a liquid crystal device or the like. An Y₂O₃ film comprising an aggregate of Y₂O₃particles having a volume-average particle diameter of 10 nm to 300 nm is disclosed. An Y₂O₃ film obtained by drying an Y₂O₃ slurry having a volume-average particle diameter, in a dispersed state, of 10 nm to 300 nm and heat-treating the dried product is also disclosed. A dispersion medium of the Y₂O₃ slurry is a polyhydric alcohol derivative. The Y₂O₃ slurry contains b-diketone as a dispersant. The Y₂O₃ slurry contains a b-diketone metal complex as a binder. The Y₂O₃slurry is a mixed slurry of two or more kinds of slurries having dispersed particle diameters of different volume-average particle diameters. Also disclosed is a process for producing an Y₂O₃ film, comprising applying an Y₂O₃ slurry having a volume-average particle diameter, in a dispersed state, of 10 nm to 300 nm and having an Y₂O₃ concentration of 0.1% by mass to 40% by mass onto a substrate so that the film thickness based on one film-forming operation should become 10 nm to 5 mm and carrying out heat treatment at a heat treatment temperature of 100°C to 300°C for a heat treatment time of 10 minutes to 5 hours after film formation.