发明名称 |
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE FABRICATION METHOD, SEMICONDUCTOR DEVICE FABRICATION METHOD PROGRAM AND SEMICONDUCTOR FABRICATION DEVICE |
摘要 |
There are provided a semiconductor device having a micro structure capable of compensating irregularities in the fabrication stage by using a result of a test performed by a tester, its fabrication method, its fabrication method program, and a semiconductor fabrication device. In a tester (1), a test sound wave is inputted so as to detect an output voltage of the device responding to the input of the test sound wave. A bonder (60) receives a test result from the tester (1) and performs classification of the device. Bonding is performed for adjusting the amplification ratio of an amplifier corresponding to the classified group. |
申请公布号 |
WO2007013580(A1) |
申请公布日期 |
2007.02.01 |
申请号 |
WO2006JP314957 |
申请日期 |
2006.07.28 |
申请人 |
TOKYO ELECTRON LIMITED;IKEUCHI, NAOKI;YAKABE, MASAMI |
发明人 |
IKEUCHI, NAOKI;YAKABE, MASAMI |
分类号 |
G01P21/00;H01L21/66 |
主分类号 |
G01P21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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