发明名称 SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE FABRICATION METHOD, SEMICONDUCTOR DEVICE FABRICATION METHOD PROGRAM AND SEMICONDUCTOR FABRICATION DEVICE
摘要 There are provided a semiconductor device having a micro structure capable of compensating irregularities in the fabrication stage by using a result of a test performed by a tester, its fabrication method, its fabrication method program, and a semiconductor fabrication device. In a tester (1), a test sound wave is inputted so as to detect an output voltage of the device responding to the input of the test sound wave. A bonder (60) receives a test result from the tester (1) and performs classification of the device. Bonding is performed for adjusting the amplification ratio of an amplifier corresponding to the classified group.
申请公布号 WO2007013580(A1) 申请公布日期 2007.02.01
申请号 WO2006JP314957 申请日期 2006.07.28
申请人 TOKYO ELECTRON LIMITED;IKEUCHI, NAOKI;YAKABE, MASAMI 发明人 IKEUCHI, NAOKI;YAKABE, MASAMI
分类号 G01P21/00;H01L21/66 主分类号 G01P21/00
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