OPTOELECTRONIC SEMICONDUCTOR CHIP

摘要

The application relates to an optoelectronic semiconductor chip (20) comprising the following sequence of regions in a growth direction (s) of the semiconductor chip (20): - a p-doped barrier layer (1), for an active region (2), - the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and - an n-doped barrier layer (3) for the active region (2). The application furthermore relates to a component comprising such a semiconductor chip (20) and to a method for producing such a semiconductor chip (20).