发明名称 |
LOW RESISTANCE TITANIUM NITRIDE FILMS |
摘要 |
<p>The use of atomic layer deposition (ALD) to form a conductive titanium nitride layer produces a reliable structure for use in a variety of electronic devices. The structure is formed by depositing titanium nitride by atomic layer deposition onto a substrate surface using a titanium-containing precursor chemical such as TDEAT, followed by a mixture of ammonia and carbon monoxide or carbon monoxide alone, and repeating to form a sequentially deposited TiN structure. Such a TiN layer may be used as a diffusion barrier underneath another conductor such as aluminum or copper, or as an electro-migration preventing layer on top of an aluminum conductor. ALD deposited TiN layers have low resistivity, smooth topology, high deposition rates, and excellent step coverage and electrical continuity.</p> |
申请公布号 |
WO2007013924(A1) |
申请公布日期 |
2007.02.01 |
申请号 |
WO2006US28041 |
申请日期 |
2006.07.19 |
申请人 |
MICRON TECHNOLOGY, INC.;KRAUS, BRENDA D.;MARSH, EUGENE P. |
发明人 |
KRAUS, BRENDA D.;MARSH, EUGENE P. |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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