| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the number of times of photolithographic processes in the manufacturing method of display device using a TFT and semiconductor device having the function to transmit and receive data by radio and also manufacture, with good yield in lower cost, an electronic device represented by a TFT having higher electric characteristic; to display device and semiconductor device having the function to transmit; and to receive data by radio in the simplified manufacturing method. <P>SOLUTION: In the manufacturing method of semiconductor device, a layer 102 of a lower coating ability and a region of a higher coating ability are formed on a substrate. A projected conductive layer 121 is formed on the region of higher coating ability by repeating coating and burning of a substance having the conductive particle. <P>COPYRIGHT: (C)2007,JPO&INPIT |
| 申请公布号 |
JP2007027367(A) |
申请公布日期 |
2007.02.01 |
| 申请号 |
JP20050206695 |
申请日期 |
2005.07.15 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
FUJII ITSUKI;MORISUE MASAFUMI |
| 分类号 |
H01L29/41;G02F1/1368;H01L21/28;H01L21/3205;H01L21/336;H01L21/768;H01L23/52;H01L29/786;H01L51/50;H05B33/06;H05B33/10 |
主分类号 |
H01L29/41 |
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