发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of determining whether the output fall of the semiconductor laser device is derived from the degradation of the semiconductor laser device or the degradation of a probe. SOLUTION: The semiconductor laser device comprises a semiconductor laser element 3 for generating a laser beam; a laser beam detector 4 for carrying out the monitoring of the laser beam generated from the semiconductor laser element; a probe 6 for guiding the laser beam to an object to be irradiated; an optical power meter 7 for measuring the probe output light from the probe; a memory 8 for memorizing measured data by a laser beam detector and the optical power meter; and a control unit 5 to determine whether the transmission factor of the probe is degraded or not, by using the value of current which drives the semiconductor laser element stored in the memory, the intensity of the laser beam and probe output light, the value of current which drives newly the measured semiconductor laser element, and the intensity of the laser beam and the probe output light. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007027322(A) 申请公布日期 2007.02.01
申请号 JP20050205917 申请日期 2005.07.14
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MINEHISA JIRO
分类号 H01S5/00 主分类号 H01S5/00
代理机构 代理人
主权项
地址