| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a DSOI transistor which can prevent the occurrence of crystal defects during manufacturing without requiring a special manufacturing apparatus, and to provide the semiconductor device. SOLUTION: First, an SiGe layer 3 is formed on an Si substrate 1, and of the SiGe layer 3, a part sandwiched by a source forming region and a drain forming region is etched to be eliminated, and thus, a trench is formed. Next, an Si layer 10 is formed on the Si substrate 1 so as to bury the trench and cover the SiGe layer 3. Then, the Si layer 10 outside the transistor forming region and the SiGe layer 3 outside thereof are etched and eliminated, thereby exposing the side surface of the SiGe layer 3 along the periphery of the transistor forming region. After that, the SiGe layer 3 is etched and eliminated from the exposed side surface, thereby forming cavity portions 15 below the Si layer 10 of the transistor forming region, and subsequently, forming an SiO<SB>2</SB>film 17 in the cavity portions 15. COPYRIGHT: (C)2007,JPO&INPIT
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