发明名称 |
Dry etching process and method for manufacturing magnetic memory device |
摘要 |
Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma and a production method of an MRAM, wherein the dry etching method is applied to processing of the pin layer. The MRAM is configured to have a memory portion comprising a magnetic memory element composed of tunnel magnetoresistive effect element formed by stacking a magnetic fixed layer having a fixed magnetization direction, a tunnel barrier layer and a magnetic layer capable of changing the magnetization direction.
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申请公布号 |
US2007026681(A1) |
申请公布日期 |
2007.02.01 |
申请号 |
US20060568960 |
申请日期 |
2006.02.22 |
申请人 |
SONY CORPORATION |
发明人 |
SHIRAIWA TOSHIAKI;TATSUMI TETSUYA;SAMUKAWA SEIJI |
分类号 |
H01L21/302;H01L21/3065;H01L21/3213;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;H01L43/12 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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