发明名称 Integrated circuit with multi-length power transistor segments
摘要 A monolithic integrated circuit fabricated on a semiconductor die includes a control circuit and a first output transistor having segments substantially equal to a first length. A second output transistor has segments substantially equal to a second length. The first and second output transistors occupy an L-shaped area of the semiconductor die, the L-shaped area having first and second inner sides that are respectively disposed adjacent first and second sides of the control circuit. At least one of the first and second output transistors is coupled to the control circuit. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).
申请公布号 US2007023778(A1) 申请公布日期 2007.02.01
申请号 US20060540261 申请日期 2006.09.29
申请人 发明人 BALAKRISHNAN BALU
分类号 H01L31/111 主分类号 H01L31/111
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