发明名称 |
Deposition apparatus for semiconductor processing |
摘要 |
The present invention relates generally to a deposition apparatus for semiconductor processing. More specifically, embodiments of the present invention relate to a deposition apparatus having a reduced reaction zone volume. In some embodiments a deposition apparatus is provided with a process chamber having a raised reaction zone. Other embodiments of the present invention provide a deposition apparatus with a process chamber having a vertical baffle ring. Embodiments of the present invention provide a reduced reaction zone or volume which promotes uniform gas flow pattern and faster gas exchange.
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申请公布号 |
US2007022959(A1) |
申请公布日期 |
2007.02.01 |
申请号 |
US20060496787 |
申请日期 |
2006.07.31 |
申请人 |
BERCAW CRAIG;COSSENTINE DAN;BAILEY ROBERT J;YAO JACK C;LO TOMMY T |
发明人 |
BERCAW CRAIG;COSSENTINE DAN;BAILEY ROBERT J.;YAO JACK C.;LO TOMMY T. |
分类号 |
C23C16/00 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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