发明名称 |
Ferroelectric random access memory circuits for guarding against operation with out-of-range voltages and methods of operating same |
摘要 |
A method of operating a ferroelectric random access memory (FRAM) can include reading a low-voltage FRAM monitoring memory array and preventing a read/write-back of an FRAM memory cell array if data read from the low-voltage FRAM monitoring memory array is corrupted.
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申请公布号 |
US2007025136(A1) |
申请公布日期 |
2007.02.01 |
申请号 |
US20060378726 |
申请日期 |
2006.03.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YANG HEE-HYUN |
分类号 |
G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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