| 摘要 |
PROBLEM TO BE SOLVED: To improve TFT characteristics and after-image by preventing abrupt increase in optical leakage current in a mask number reducing process. SOLUTION: In a manufacturing method of a TFT display plate, a gate line is formed and a gate insulating film, semiconductor layer, and ohmic contact layer are formed over it. On the ohmic contact layer, a first conductive layer containing Mo, a second conductive layer containing Al, and a third conductive layer containing Mo are formed. A first photosensitive film pattern is formed on the third conductive layer. With the first photosensitive film pattern as a mask, the first conductive layer, the second conductive layer, and the third conductive layer are etched. With the first photosensitive film pattern as a mask, the ohmic contact layer and the semiconductor layer are etched. The first photosensitive film pattern is removed by a specified thickness to form a second photosensitive film pattern. With the second photosensitive film pattern as a mask, the first conductive layer, the second conductive layer, and the third conductive layer are etched to expose a part of the ohmic contact layer. The exposed ohmic contact layer is etched using chlorine gas and fluorine gas. COPYRIGHT: (C)2007,JPO&INPIT |
