| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of quickly measuring electrical characteristics before bump formation, and reducing the development time period by feeding back this measurement result, and to provide the semiconductor device. SOLUTION: A plurality of openings 3 having such a size that the tip of a probing needle cannot enter them are formed in a protective film 2 deposited on metal wiring 1, so that the bottoms of the openings reach the surface of the metal wiring 1. A probing pad 4 is formed on the region, wherein the plurality of openings 3 in the protective film 2 are formed by patterning a barrier metal film deposited so that it is electrically connected to the metal wiring 1 via these openings 3, and the tip surface of the probing needle is brought in contact with this probing pad 4 to enable the measurement of the electrical characteristics of a formed circuit. COPYRIGHT: (C)2007,JPO&INPIT
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