| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory integrated circuit device capable of storing 2 bits. SOLUTION: The nonvolatile memory integrated circuit device includes a semiconductor substrate, a source and a drain formed in the semiconductor substrate, a stepped recess channel formed between the source and the drain, a trap structure including a multitude of nano-crystals for storing electric charge laid out on a region of the stepped recess channel, and a gate on the trap structure. COPYRIGHT: (C)2007,JPO&INPIT
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