METHOD OF FORMING FULL-GERMANIUM SILICIDE-FORMED GATE MOSFET AND DEVICE OBTAINED THEREFROM

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a full-germanium silicide formed gate MOSFET and a device obtained therefrom. SOLUTION: In a MOSFET provided with a full-germanium silicide-formed gate electrode having a high work function, the gate electrode is formed by an auto-aligned reaction step between a silicide-formed metal and a semiconductor material containing silicon and germanium, or is preferably formed by a reaction between nickel and SiGe, and the work function of the gate electrode is finely adjustable. COPYRIGHT: (C)2007,JPO&INPIT