MANUFACTURING METHOD OF SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE, AND INFRARED ABSORBER USED FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To modify a single-crystal silicon layer on the surface of a substrate to single-crystal silicon carbide quickly and uniformly. SOLUTION: A carbon board 410 made of an amorphous carbon/graphite compound carbon material is arranged opposite to the surface of the substrate 100. Hydrocarbon gas and hydrogen gas as carbon sources are supplied to the surface of the substrate 100, the carbon board 410 is heated by infrared rays from an infrared lamp 400, and the surface of the substrate 100 is heated by radiant heat generated from the carbon board 410. COPYRIGHT: (C)2007,JPO&INPIT